Retention reliability of FinFet SONOS device

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 530-533

  Lee, Jong Jin ^a   Lee, Se Hoon ^a   Chae, Heesoon ^a   Choi, Byung Yong ^a   Sung, Suk Kang ^a   Kim, Seok Pil ^a   Cho, Eun Suk ^a   Lee, Choong Ho ^a   Park, Donggun ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Field acceleration; FinFET; Lifetime; Retention; SONOS; Thermal acceleration

Indexed keywords

FIELD ACCELERATION; RETENTION RELIABILITY; THERMAL ACCELERATION;

ACCELERATION; ELECTRIC CHARGE; ELECTRIC LOSSES; FIELD EFFECT TRANSISTORS; RELIABILITY;

FLASH MEMORY;

EID: 34250779941     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251274     Document Type: Conference Paper

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