Highly conductive and transparent thin ZnO films prepared in situ in a low pressure system

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1222-1225

  Ataev, B M ^a   Bagamadova, A M ^a   Mamedov, V V ^a   Omaev, A K ^a   Rabadanov, M R ^a  

^a INSTITUTE OF PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONDUCTIVE MATERIALS; ELECTRIC PROPERTIES; GALLIUM; LUMINESCENCE; PRESSURE; SAPPHIRE; SUBSTRATES; THERMODYNAMIC STABILITY; TIN; ZIRCONIA;

EPITAXIAL THIN FILMS; HIGHLY CONDUCTIVE; IN SITU DOPED; LOW PRESSURE SYSTEM; SINGLE CRYSTAL SAPPHIRE SUBSTRATES;

THIN FILMS;

EID: 0033514543     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01217-2     Document Type: Article

References (6)

1. B.M. Ataev, A.M. Bagamadova, A.M. Djabrailov, V.V. Mamedov, R.A. Rabadanov, Thin Solid Films 260 (1995) 19.
2. A.Kh. Abduev, A.D. Adukov, B.M. Ataev, R.A. Rabadanov, D.A. Shaikhov, Optika i spektroskopiya 50 (1981) 1137.
3. T. Minami, H. Nanto, Sh. Takata, Jpn. J. Appl. Phys. 64 (1984) 5117.
4. F.A. Kröger, The Chemistry of Imperfect Crystals, vol. 2, North-Holland, Amsterdam, 1974.
5. R.L. Weiner, W.C. Tait, Phys. Rev. 116 (1968) 791.
6. B.M. Ataev, A.M. Bagamadova, V.V. Mamedov, Thin Solid Films 283 (1996) 5.