Optical and electrical transport properties of facing-target sputtered Al doped ZnO transparent film

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Li, Z Q ^a   Zhang, D X ^b   Lin, J J ^c  

^a TIANJIN UNIVERSITY   (China)

^b NANKAI UNIVERSITY   (China)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC PROPERTIES; HAMILTONIANS; MAGNETORESISTANCE; OPACITY; OPTICAL TRANSFER FUNCTION; PHONONS; SPUTTERING; THIN FILMS;

BAND GAP ENERGY; BURSTEIN-MOSS EFFECT; ELECTRICAL TRANSPORT PROPERTIES; SEMIEMPIRICAL EXPRESSION;

ZINC OXIDE;

EID: 33745697483     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2204827     Document Type: Article

References (13)

1. Ü. Özgür et al., J. Appl. Phys. 98, 041301 (2005).
2. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Prog. Mater. Sci. 50, 293 (2005).
3. C. Calderön, G. Gordillo, and J. Olarte, Phys. Status Solidi B 242, 1915 (2005).
4. K. H. Kim, K. C. Park, and D. Y. Ma, J. Appl. Phys. 81, 7764 (1997).
5. G. K. Paul and S. K. Sen, Mater. Lett. 57, 959 (2002).
6. J. Tauc, R. Grigorvici, and Y. Yanca, Phys. Status Solidi 15, 627 (1966).
7. F. K. Shan and Y. S. Yu, J. Eur. Ceram. Soc. 24, 1869 (2004).
8. Z. Q. Li and J. J. Lin, J. Appl. Phys. 96, 5918 (2004).
9. Y. Imai, A. Watanabe, and I. Shimono, J. Mater. Sci.: Mater. Electron. 14, 149 (2003).
10. M. Gabás, S. Gota, J. R. Ramos-Barrado, M. Sánchez, N. T. Barrett, J. Avila, and M. Sacchi, Appl. Phys. Lett. 86, 042104 (2005).
11. C. Y. Wu and J. J. Lin, Phys. Rev. B 50, 385 (1994).
12. R. P. Khosla and J. R. Fischer, Phys. Rev. B 2, 4084 (1970).
13. E. H. Sondheimer and A. H. Wilson, Proc. R. Soc. London, Ser. A 190, 435 (1947).