SCOPUS 정보 검색 플랫폼

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 4, Issue 6, 2010, Pages 859-862

Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures

(4) Tascioglu I a Uslu, H a Safak Y a Ozbay E b

a GAZI UNIVERSITY (Turkey)

b BILKENT UNIVERSITY (Turkey)

Author keywords

C V f and G w V f measurements; Interface states; Ni Au AlGaN AlN GaN; Rs

Indexed keywords

ALUMINUM COMPOUNDS; BIAS VOLTAGE; CAPACITANCE; ELECTRIC RESISTANCE; GALLIUM COMPOUNDS; INTERFACE STATES; NICKEL COMPOUNDS;

ADMITTANCE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; FREQUENCY DEPENDENT; FREQUENCY-DEPENDENT CAPACITANCE; INTERFACE STATE DENSITY; MEASUREMENT METHODS; PARTICULAR DISTRIBUTION;

GOLD COMPOUNDS;

EID: 79551640680 PISSN: 18426573 EISSN: 20653824 Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

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