Quasi van der Waals epitaxy of ZnSe on the layered chalcogenides InSe and GaSe

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 263-265

  Wisotzki, E ^a   Klein, A ^a   Jaegermann, W ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; VAN DER WAALS FORCES; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM SELENIDE; INDIUM SELENIDE; ZINC SELENIDE;

SEMICONDUCTING FILMS;

EID: 0034497040     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01520-0     Document Type: Article

References (6)

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5. W. Jaegermann, A. Klein, C. Pettenkofer, in: H. Hughes, H. Starnberg (Eds.), Photoelectron Spectroscopy of Materials of Low Dimensional Structures, Kluwer Ac. Pub., in press.
6. Madelung O. Semiconductors - Basic Data. 1996;Springer.