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Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

Effect of annealing on the microstructure and electrical property of RuN thin films

(5) Wu, Chia Yang a Lee, Wen Hsi a Chang, Shih Chieh b Cheng, Yi Lung c Wang, Ying Lang b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c NATIONAL CHI NAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ANNEALING TIME; AS-DEPOSITED FILMS; BARRIER LAYERS; CU DIFFUSION BARRIER; CU FILMS; DAMASCENE PROCESS; ELECTRICAL PROPERTY; FILM RESISTANCE; FOUR-POINT PROBE; GRAIN SIZE; THERMAL STABILITY; X-RAY DIFFRACTION DATA;

ELECTRIC PROPERTIES; NITRIDES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RUTHENIUM; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION;

COPPER;

EID: 79551589822 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3537825 Document Type: Article

Times cited : (15)

References (17)

1
- 33646386918
- 10.1149/1.2188328
- M. Damayanti, T. Sritharan, Z. H. Gan, S. G. Mhaisalkar, N. Jiang, and L. Chanb, J. Electrochem. Soc., 153, J41 (2006). 10.1149/1.2188328
- (2006) J. Electrochem. Soc. , vol.153 , pp. 41
- Damayanti, M.¹ Sritharan, T.² Gan, Z.H.³ Mhaisalkar, S.G.⁴ Jiang, N.⁵ Chanb, L.⁶

2
- 33644803500
- 10.1149/1.2131826
- T. P. Moffat, M. Walker, P. J. Chen, J. E. Bonevich, W. F. Egelhoff, L. Richter, C. Witt, T. Aaltonen, M. Ritala, M. Leskelä, J. Electrochem. Soc., 153, C37 (2006). 10.1149/1.2131826
- (2006) J. Electrochem. Soc. , vol.153 , pp. 37
- Moffat, T.P.¹ Walker, M.² Chen, P.J.³ Bonevich, J.E.⁴ Egelhoff, W.F.⁵ Richter, L.⁶ Witt, C.⁷ Aaltonen, T.⁸ Ritala, M.⁹ Leskelä, M.¹⁰

3
- 0038516975
- 10.1149/1.1565138
- O. Chyan, T. N. Arunagiri, and T. Ponnuswamy, J. Electrochem. Soc., 150, C347 (2003). 10.1149/1.1565138
- (2003) J. Electrochem. Soc. , vol.150 , pp. 347
- Chyan, O.¹ Arunagiri, T.N.² Ponnuswamy, T.³

4
- 4344580459
- 10.1149/1.1757113
- R. Chan, T. N. Arunagiri, Y. Zhang, O. Chyan, R. M. Wallace, M. J. Kim, and T. Q. Hurdc, Electrochem. Solid-State Lett., 7, G154 (2004). 10.1149/1.1757113
- (2004) Electrochem. Solid-State Lett. , vol.7 , pp. 154
- Chan, R.¹ Arunagiri, T.N.² Zhang, Y.³ Chyan, O.⁴ Wallace, R.M.⁵ Kim, M.J.⁶ Hurdc, T.Q.⁷

5
- 34848889935
- Cu films containing insoluble Ru and Ru NX on barrierless Si for excellent property improvements
- DOI 10.1063/1.2790843
- J. P. Chu, C. H. Lin, and V. S. John, Appl. Phys. Lett., 91, 132109 (2007). 10.1063/1.2790843 (Pubitemid 47502569)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132109
- Chu, J.P.¹ Lin, C.H.² John, V.S.³

6
- 34047269595
- Microstructural evolution of annealed ruthenium-nitrogen films
- DOI 10.1149/1.2719563
- M. Damayanti, T. Sritharan, S. G. Mhaisalkar, H. J. Engelmann, E. Zschech, A. V. Vairagar, and L. Chana, Electrochem. Solid-State Lett., 10, P15 (2007). 10.1149/1.2719563 (Pubitemid 46550212)
- (2007) Electrochemical and Solid-State Letters , vol.10 , Issue.6 , pp. 15-17
- Damayanti, M.¹ Sritharan, T.² Mhaisalkar, S.G.³ Engelmann, H.J.⁴ Zschech, E.⁵ Vairagar, A.V.⁶ Chan, L.⁷

7
- 43049105801
- Improvement on the diffusion barrier performance of reactively sputtered Ru-N film by incorporation of Ta
- DOI 10.1149/1.2905749
- C. W. Chen, J. S. Chen, and J. S. Jeng, J. Electrochem. Soc., 155, H438 (2008). 10.1149/1.2905749 (Pubitemid 351623475)
- (2008) Journal of the Electrochemical Society , vol.155 , Issue.6
- Chen, C.-W.¹ Chen, J.S.² Jeng, J.-S.³

8
- 27844593823
- 2 sputtering gas mixture on the preferential orientation of sputtered Ru films
- DOI 10.1016/j.tsf.2005.08.130, PII S0040609005013519, ICMCTF 2005
- M. Kawamura, K. Yagi, Y. Abe, and K. Sasaki, Thin Solid Films, 494, 240 (2006). 10.1016/j.tsf.2005.08.130 (Pubitemid 41659837)
- (2006) Thin Solid Films , vol.494 , Issue.1-2 , pp. 240-243
- Kawamura, M.¹ Yagi, K.² Abe, Y.³ Sasaki, K.⁴

9
- 31544432585
- Effects of dissolved nitrogen in improving barrier properties of ruthenium
- DOI 10.1063/1.2167610, 044101
- M. Damayantia, T. Sritharan, S. G. Mhaisalkar, and Z. H. Gan, Appl. Phys. Lett., 88, 044101 (2006). 10.1063/1.2167610 (Pubitemid 43164114)
- (2006) Applied Physics Letters , vol.88 , Issue.4 , pp. 1-3
- Damayanti, M.¹ Sritharan, T.² Mhaisalkar, S.G.³ Gan, Z.H.⁴

10
- 50949119154
- in
- S. Ogawa, N. Tarumi, M. Abe, M. Shiohara, H. Imamura, and S. Kondo, in Interconnect Technology Conference, IITC 2008. International, p. 102 (2008).
- (2008) Interconnect Technology Conference, IITC 2008. International , pp. 102
- Ogawa, S.¹ Tarumi, N.² Abe, M.³ Shiohara, M.⁴ Imamura, H.⁵ Kondo, S.⁶

11
- 0346192693
- 10.1109/TMAG.1987.1064969
- H. Ihara, N. Terada, K. Senzaki, M. Hirabayashi, Y. Kimura, R. Uzuka, F. Kawashima, and M. Akimoto, IEEE Trans. Magn., 23, 1011 (1987). 10.1109/TMAG.1987.1064969
- (1987) IEEE Trans. Magn. , vol.23 , pp. 1011
- Ihara, H.¹ Terada, N.² Senzaki, K.³ Hirabayashi, M.⁴ Kimura, Y.⁵ Uzuka, R.⁶ Kawashima, F.⁷ Akimoto, M.⁸

12
- 33644891010
- 10.1016/j.tsf.2005.09.129
- J. J. Tan, X. P. Qu, Q. Xie, Y. Zhou, and G. P. Ru, Thin Solid Films, 504, 231 (2006). 10.1016/j.tsf.2005.09.129
- (2006) Thin Solid Films , vol.504 , pp. 231
- Tan, J.J.¹ Qu, X.P.² Xie, Q.³ Zhou, Y.⁴ Ru, G.P.⁵

13
- 45049084092
- 10.1016/j.apsusc.2008.02.160
- D. C. Perng, J. B. Yeh, and K. C. Hsu, Appl. Surf. Sci., 254, 6059 (2008). 10.1016/j.apsusc.2008.02.160
- (2008) Appl. Surf. Sci. , vol.254 , pp. 6059
- Perng, D.C.¹ Yeh, J.B.² Hsu, K.C.³

14
- 25644455126
- Cu wettability and diffusion barrier property of Ru thin film for Cu metallization
- DOI 10.1149/1.1939353
- H. Kim, T. Koseki, T. Ohba, T. Ohta, Y. Kojima, H. Sato, and Y. Shimogakia, J. Electrochem. Soc., 152, G594 (2005). 10.1149/1.1939353 (Pubitemid 41381146)
- (2005) Journal of the Electrochemical Society , vol.152 , Issue.8
- Kim, H.¹ Koseki, T.² Ohba, T.³ Ohta, T.⁴ Kojima, Y.⁵ Sato, H.⁶ Shimogaki, Y.⁷

15
- 33646391224
- 10.1149/1.2193335
- S. H. Kwon, O. K. Kwon, J. S. Min, and S. W. Kang, J. Electrochem. Soc., 153, G578 (2006). 10.1149/1.2193335
- (2006) J. Electrochem. Soc. , vol.153 , pp. 578
- Kwon, S.H.¹ Kwon, O.K.² Min, J.S.³ Kang, S.W.⁴

16
- 3943104807
- 10.1116/1.581697
- M. Stavrev, D. Fischer, and F. Praessler, J. Vac. Sci. Technol. A, 17, 993 (1999). 10.1116/1.581697
- (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 993
- Stavrev, M.¹ Fischer, D.² Praessler, F.³

17
- 0030714855
- C. Ryu, A. L. S. Loke, T. Nogami, and S. S. Wong, IEEE Int. Reliab. Phys. Symp. Proc., 1997, 201.
- IEEE Int. Reliab. Phys. Symp. Proc. , vol.1997 , pp. 201
- Ryu, C.¹ Loke, A.L.S.² Nogami, T.³ Wong, S.S.⁴

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