SCOPUS 정보 검색 플랫폼

Volumn 31, Issue 1, 2011, Pages 205-215

Interaction mechanisms between Ar-O 2 post-discharge and stearic acid II: Behaviour of thick films

(9) Bernardelli, E A a,b Belmonte, T a Duday, D c Frache, G c Poncin Epaillard, F d Noel C a Choquet, P c Migeon, H N c Maliska, A b

a INSTITUT JEAN LAMOUR (France)

b FEDERAL UNIVERSITY OF SANTA CATARINA (Brazil)

c LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (Luxembourg)

d UNIVERSITÉ DU MAINE (France)

Author keywords

Plasma cleaning; Post discharge; Stearic acid

Indexed keywords

ACID FUNCTION; C-C BONDS; CONTINUOUS MODE; DIFFUSION LENGTH; FREQUENCY RANGING; FUNCTIONALIZATION PROCESS; FUNCTIONALIZATIONS; INTERACTION MECHANISMS; MEAN TEMPERATURE; OXYGEN ATOM; OXYGEN FLOW RATES; PLASMA CLEANING; POST-DISCHARGE; REACTIVE GAS; TIME-AVERAGED;

OXYGEN; PARAFFINS; STEARIC ACID; SURFACE REACTIONS; THICK FILMS;

ELECTRIC DISCHARGES;

EID: 79551538989 PISSN: 02724324 EISSN: None Source Type: Journal
DOI: 10.1007/s11090-010-9264-1 Document Type: Article

Times cited : (12)

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