Active area uniformity of InGaAs/InP single-photon avalanche diodes

IEEE Photonics Journal

Volumn 3, Issue 1, 2011, Pages 31-41

  Tosi, A ^a   Acerbi, F ^a   Mora, A Dalla ^a   Itzler, M A ^b   Jiang, X ^b  

^a POLITECNICO DI MILANO   (Italy)

^b PRINCETON LIGHTWAVE INC   (United States)

Author keywords

Avalanche Photodiode; near infrared detector; Photodetectors; photon counting; Single Photon Avalanche Diodes (SPADs)

Indexed keywords

AVALANCHE PHOTODIODES; EFFICIENCY; ELECTRIC FIELDS; GALLIUM COMPOUNDS; INFRARED DEVICES; PARTICLE BEAMS; PHOTODETECTORS; PHOTONS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DETECTION EFFICIENCY; NEAR INFRARED DETECTOR; NEAR INFRARED LUMINESCENCE; NON-UNIFORM DELAYS; NONUNIFORM ELECTRIC FIELD; PHOTON COUNTING; POSITION DEPENDENTS; SINGLE PHOTON AVALANCHE DIODE;

AVALANCHE DIODES;

EID: 79251629058     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2010.2100037     Document Type: Article

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