Aluminum doping by low-temperature homoepitaxial growth for Ni ohmic contacts to p-type 4H-SiC

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 581-584

  Krishnan, Bharat ^a   Kotamraju, Siva Prasad ^a   Melnychuk, Galyna ^a   Merrett, Neil ^b   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b UES INC   (United States)

Author keywords

Aluminum doping; Halo carbon; Low temperature epitaxial growth; Ohmic contact

Indexed keywords

ALUMINUM; ELECTRIC CONTACTORS; GROWTH RATE; NICKEL; OHMIC CONTACTS; SILICA; SILICON CARBIDE; SILICON OXIDES; TEMPERATURE;

ALUMINUM DOPING; ATOMIC CONCENTRATION; HOMOEPITAXIAL GROWTH; LOW TEMPERATURE EPITAXIAL GROWTH; OHMIC CONTACT FORMATION; SELECTIVE EPITAXIAL GROWTH; SELECTIVE GROWTH; SPECIFIC CONTACT RESISTANCES;

EPITAXIAL GROWTH;

EID: 79251555306     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.581     Document Type: Conference Paper

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