Room-temperature Si-Si and Si-SiN wafer bonding

2010 IEEE CPMT Symposium Japan, ICSJ10

Volumn , Issue , 2010, Pages

  Kondou, Ryuichi ^a   Wang, Chenxi ^a   Suga, Tadatomo ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION LAYER; BONDING INTERFACES; BONDING METHODS; BONDING STRENGTH; CHEMICAL STATE; COMPOSITION RATIO; ROOM TEMPERATURE; SI SURFACES; WAFER SURFACE;

ADHESION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; SILICON WAFERS;

WAFER BONDING;

EID: 79251552009     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CPMTSYMPJ.2010.5679530     Document Type: Conference Paper

References (12)

1. Lasky J. B., "Wafer Bonding for Silicon-on-insulator Technologies," Appl. Phys. Lett., Vol. 48, No.1, (1986), pp. 78-80.
2. Tong Q.Y., Lee T.H., Gösele U., Reiche M., Ramm J., and Beck E., "The Role of Surface Chemistry in Bonding of Standard Silicon Wafers," J. Electrochem. Soc., Vol. 144, (1997), pp. 384-389. (Pubitemid 127628701)
3. Haisma J., Spierings B.A.C.M., Biermann U.K.P., and Gorkum A. A. van, "Diversity and Feasibility of Direct Bonding: a Survey of a Dedicated Optical Technology," Appl. Opt., Vol. 33, No. 7, (1994), pp. 1154-1169.
4. 3 Substrates Using Ar-Beam Surface Activation," Jpn. J. Appl. Phys., Part II, Vol. 38, (1999), pp. L 1559-L1561.
5. Takagi H., Kikuchi K., Maeda R., Chung T.R., and Suga T., "Surface Activated Bonding of Silicon Wafers at Room Temperature," Appl. Phys. Lett., Vol. 68, (1996), pp. 2222-2224. (Pubitemid 126683767)
6. Chung T.R., Hosoda N., Suga T., and Takagi H., "1.3 μm InGaAsP/InP Lasers on GaAs Substrate Fabricated by The Surface Activated Wafer Bonding Method at Room Temperature," Appl. Phys. Lett., Vol. 72, (1998), pp. 1565-1566.
7. Howlader M. M. R., Suga T., and Kim M. J., "A Novel Bonding Method for Ionic Wafers," IEEE Trans. Adv. Packag., Vol. 30, No. 4, (2007), pp. 598-604.
8. Kaufman H. R., Robinson R. S., and Seddon R. I., "End-Hall Ion Source," J. Vac. Sci. Technol., A5 (1987), pp. 2081-2084.
9. Maszara W. P., Goetz G., Cavigla A., and McKitterick J. B., "Bonding of Silicon Wafers for Silicon-on-insulator," J. Appl. Phys., Vol. 64, (1988), pp. 4943-4950.
10. Nobel C., Industrial Adhesives Handbook (Casco Nobel, Fredensborg, Denmark, 1992).
11. Lau S. S., Feng J.S.-Y., Olowolafe J. O., and Nicolet M.-A., "Iron Silicide Thin Film Formation at Low Temperatures," Thin Solid Flims, Vol. 25, (1975), pp. 415-422.
12. Telling N. D., Faunce C. A., Bonder M. J., Grundy P. J., Lord D. G., Van den Berg J. A., and Langridge S., "Interdiffusion in Direct Ion Beam Deposited Isotopic Fe/Si Trilayers," Appl. Phys. Lett., Vol. 89, (2001), pp. 7074-7076.