Electrical properties of resistive switches based on Ba1-xSrxTiO3 thin films prepared by RF co-sputtering

Revista Mexicana de Fisica

Volumn 56, Issue 5, 2010, Pages 401-405

  Marquez Herrera A ^a,b   Hernandez Rodriguez E ^a   Cruz, M P ^c   Calzadilla Amaya, O ^d   Melendez Lira M ^e   Guillen Rodriguez J ^b   Zapata Torres, M ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b SCHOOL OF ENGINEERING AND SCIENCES   (Mexico)

^c UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^d UNIVERSITY OF HAVANA   (Cuba)

^e DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Barium strontium titanate; Non volatile memories; ReRAM cells; Thin films

Indexed keywords

EID: 79251546443     PISSN: 0035001X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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