Effect of postdeposition oxidation and subsequent reduction annealing on electric and optical properties of amorphous ZnO-SnO2 transparent conducting films

Electrochemical and Solid-State Letters

Volumn 14, Issue 3, 2011, Pages

  Wang, Chin Hui ^a   Chen, Shih Wei ^a   Wu, Jenn Ming ^a   Wei, Chao Nan ^b   Bor, Hui Yun ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ZNO; ELECTRICAL CONDUCTIVITY; ELECTRON CONCENTRATION; FORMING GAS; FORMING-GAS ANNEALING; GLASS SUBSTRATES; OXIDIZATION; POSTDEPOSITION OXIDATION; RADIO FREQUENCIES; ROOM TEMPERATURE; SUBSEQUENT REDUCTION; TRANSPARENT CONDUCTING FILMS;

ANNEALING; CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY; MAGNETRONS; OPTICAL PROPERTIES; OXIDATION; SUBSTRATES; TIN; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 78951475276     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3528169     Document Type: Article

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