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Organic Electronics

Volumn 12, Issue 3, 2011, Pages 509-515

An ambipolar to n-type transformation in pentacene-based organic field-effect transistors

(6) Chang, Jer Wei a Liang, Po Wei a Lin, Min Wei a Guo, Tzung Fang a Wen, Ten Chin a Hsu, Yao Jane b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

Author keywords

Aluminum; Ambipolar; n Type; Organic field effect transistors; Pentacene

Indexed keywords

ALUMINUM; ELECTRODES; X RAY ABSORPTION;

AMBIPOLAR; ANNEALING TREATMENTS; INTERFACIAL INTERACTION; MICRO-RAMAN SPECTRA; NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTRUM; ORDERS OF MAGNITUDE; PENTACENES; SOURCE-DRAIN ELECTRODES;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 78951475021 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2010.12.018 Document Type: Article

Times cited : (7)

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