Room temperature midinfrared electroluminescence from InAs quantum dots

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Wasserman, D ^a   Ribaudo, T ^a   Lyon, S A ^b   Lyo, S K ^c   Shaner, E A ^c  

^a University of Massachusetts Lowell   (United States)

^b Princeton University   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; INDIUM ARSENIDE; LIGHT EMISSION; LUMINESCENCE; OPTICAL WAVEGUIDES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; QUANTUM OPTICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

ACTIVE REGIONS; CURRENT INJECTIONS; CURRENT TRANSPORT MECHANISMS; ENERGY STATE; GAAS/ALGAAS HETEROSTRUCTURES; INAS QUANTUM DOTS; INTERSUBLEVEL TRANSITIONS; MID-INFRARED; MID-INFRARED LASERS; QUANTUM CASCADES; QUANTUM DOTS; QUANTUM WELLS; QUANTUM-DOT EMITTERS; RIGOROUS MODELING; ROOM TEMPERATURES; SELF-ASSEMBLED; TRANSPORT MECHANISMS;

QUANTUM WELL LASERS;

EID: 60349112909     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3080688     Document Type: Article

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