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Journal of Magnetism and Magnetic Materials

Volumn 323, Issue 8, 2011, Pages 1033-1039

Enhancement of room temperature ferromagnetism of Fe-doped ZnO epitaxial thin films with Al co-doping

(8) Chattopadhyay, S a Nath, T K a,b Behan, A J b Neal, J R b Score, D b Feng, Q b Fox, A M b Gehring, G A b

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

Antiferromagnetic coupling; Carrier induced ferromagnetism; Defect state; Dilute magnetic semiconductor; Spinodal decomposition

Indexed keywords

ANTIFERROMAGNETIC COUPLING; CARRIER INDUCED FERROMAGNETISM; DEFECT STATE; DILUTE MAGNETIC SEMICONDUCTORS; SPINODALS;

ALUMINUM; ANTIFERROELECTRICITY; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; CARRIER CONCENTRATION; DEFECTS; DOPING (ADDITIVES); EPITAXIAL FILMS; EPITAXIAL GROWTH; MAGNETIC SEMICONDUCTORS; METAL IONS; SATURATION MAGNETIZATION; SEMICONDUCTING ANTIMONY; SPINODAL DECOMPOSITION; TRANSITION METAL COMPOUNDS; TRANSITION METALS; ZINC OXIDE;

FERROMAGNETISM;

EID: 78651469018 PISSN: 03048853 EISSN: None Source Type: Journal
DOI: 10.1016/j.jmmm.2010.11.090 Document Type: Article

Times cited : (34)

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