Measurement for thermal effusivity of AlxGa1-xN alloys using thermoreflectance with periodic heating

High Temperature Materials and Processes

Volumn 29, Issue 5-6, 2010, Pages 515-522

  Shibata, Hiroyuki ^a   Ohta, Hiromichi ^b   Nemoto, Takashi ^b   Nagayama, Shun ^b   Waseda, Yoshio ^a   Fujii, Katsushi ^a   Jacob, K Thomas ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b IBARAKI UNIVERSITY   (Japan)

^c INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

AlGaN alloys; Thermal conductivity; Thermal effusivity; Thermal microscope

Indexed keywords

ALUMINUM; GALLIUM; GALLIUM ALLOYS; SAPPHIRE; THERMAL CONDUCTIVITY OF SOLIDS;

ALGAN; HYDRIDE VAPOR PHASE EPITAXY; SAPPHIRE SUBSTRATES; SINUSOIDAL HEATING; THERMAL EFFUSIVITY; THERMAL MICROSCOPES; THERMOREFLECTANCE; VIRTUAL-CRYSTAL MODELS;

THERMAL CONDUCTIVITY;

EID: 78651380993     PISSN: 03346455     EISSN: None     Source Type: Journal    
DOI: 10.1515/HTMP.2010.29.5-6.515     Document Type: Article

References (20)

1. A. Saura, H. Ji, K.P. Hilton, D.J. Wallis, M.J. Uren, T. Martin and M. Kuball, IEEE Trans. Electron Devices, 52, (12), 3152-3158 (2007).
2. M. Kuball, S. Rajasingam, A. Saura, M.J. Uren, T. Martin, B.T. Hughes, K.P. Hilton and R.S. Balmer, Appl. Phys. Lett, 82, (1), 124-126 (2003).
3. N. Shigekawa, K. Onodera and K. Shiojima, Jpn. J. Appl. Phy, 42, 2245-2249(2003).
4. H. Shibata, Y. Waseda, H. Ohta, K. Kiyomi, K. Shimoyama, K .Fujito, H. Nagaoka, Y. Kagamitani, R. Simura and T. Fukuda, Mater. Trans., 48, (10), 2782-2786 (2007).
5. Y. Goldberg, Properties of advanced semiconductor materials, GaN, AlN, InN, BN, SiC, SiGe edited by M.E. Levinshtein, S.L. Rumyantsev and M.S. Shur, John Wiley & Sons, Inc., (2001), p.31-47.
6. B.C. Daly, H.J. Maris, A.V. Numikko, M. Kuball and J. Han, J. Appl. Phys., 92, (7), 3820-3824 (2002).
7. W. Liu and A.A. Balandin, J. Appl. Phys., 97, 073710-1-073710-6(2005).
8. M. Clemens, C.A. Paddock and G. L. Eesley, Phys. Rev. B, 37, 1085-1096 (1988).
9. H. Shjbata, H. Ohta. M. Miyashita, H. Noguchj, S. Sato, and Y. Waseda, Bull. Adv. Mater. Process. IMRAM Tohoku University, 58, 7-18 (2003).
10. R.M. Costescu, M.A. Wall, and D.G. Cahill, Phys. Rev. B, 67, 054302, 1-5 (2003).
11. M. Kuwahara, O. Suzuki, N. Taketoshi, Y. Yamakawa T. Yagi, P. J. Fons, K. Tsutsumi, M. Suzuki, T. Fukaya, J. Tominaga, and T. Baba, Jpn. J. Appl. Phys., 45-2B, 1419-1421 (2006).
12. N. Taketoshi, M. Ozawa, H. Ohta and T. Baba, 10th International Topical Meeting on Photoacoustic and Photothermal Phenomena, Rome, Italy, (1998) ; AIP Conference Proceedings 463 edited by F. Scudieri and M. Bertolotti, Woodbury, N.Y, (1999), p.315-317.
13. K. Hatori, T. Baba, N. Taketoshi and H. Ohta, Rev. Sci. Inst.,76, 114901-1-114901-7(2005).
14. H. Fukuyama, T. Yoshimura, H. Yasuda and H. Ohta, Int. J. Thermophys., 27, 1760-1777 (2006).
15. S. Kume, I. Yamada, and K. Watari, J. Am. Ceram. Soc., 92, S153-S156(2009).
16. S. Miyake, T. Kita, A. Miyake, K. Ikeda and H. Takamatsu, Rev. Sci. Inst., 80, 124901-1-124901-4 (2009).
17. I. Hatta , Thermochim Acta, 446, 176-179 (2006).
18. N. Kuwano, Y. Kugiyama, Y. Nishikouri, T. Sato and A. Usui, J. Crystal Growth, 311, 3085-3088 (2009).
19. Y. Bougrov, M. Levinshtein, S. Rumyantsev and A. Zubrilov, Properties of advanced semiconductor materials, GaN, AlN, InN, BN, SiC, SiGe edited by M.E. Levinshtein, S.L. Rumyantsev and M.S. Shur, John Wiley & Sons, Inc., (2001), p.1-30.
20. K.T. Jacob, S. Singh and Y. Waseda, J. Mater. Res., 22, 3475-3483 (2007).