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Journal of Alloys and Compounds

Volumn 509, Issue 6, 2011, Pages 3025-3031

Influence of oxygen partial pressure on electrical and optical properties of Zn0.93Mn0.07O thin films

(6) Li, Xue Yong a,b Li, Hong Jian a Yuan, Ming a Wang, Zhi Jun a Zhou, Zi You a Xu, Ren Bo a

a CENTRAL SOUTH UNIVERSITY (China)

b HUNAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

Electrical properties; Microstructure; Mn doped ZnO; Optical properties

Indexed keywords

BAND GAPS; BLUE SHIFT; C-AXIS ORIENTATIONS; CARRIER DENSITY; DEPOSITED FILMS; DIFFRACTION MEASUREMENTS; DIRECT CURRENT; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTY; GLASS SUBSTRATES; INFLUENCE OF OXYGEN; MN-DOPED ZNO; NEAR BAND EDGE EMISSIONS; OPTICAL TRANSMITTANCE; OXYGEN PARTIAL PRESSURE; PHOTOLUMINESCENCE PEAK; REACTIVE MAGNETRON CO-SPUTTERING; RED SHIFT; SINGLE PHASE; VISIBLE REGION; WURTZITE STRUCTURE; ZINC INTERSTITIALS;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MAGNETRONS; MANGANESE; MANGANESE OXIDE; MICROSTRUCTURE; OPTICAL PROPERTIES; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; ZINC; ZINC OXIDE; ZINC SULFIDE;

OPTICAL FILMS;

EID: 78651349035 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.11.191 Document Type: Article

Times cited : (20)

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