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Volumn 151, Issue 4, 2011, Pages 332-336
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Thermoelectric properties and electronic structure of Al-doped ZnO
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Author keywords
A. ZnO semiconductor; B. Chemical synthesis; C. Electronic structure; D. Thermoelectric properties
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Indexed keywords
AL-CONCENTRATION;
AL-DOPED ZNO;
AL-DOPING;
B. CHEMICAL SYNTHESIS;
C. ELECTRONIC STRUCTURE;
DENSITY OF STATE;
ELECTRICAL CONDUCTIVITY;
ELECTRONIC BAND STRUCTURE;
FIGURE OF MERIT;
HIGH ELECTRICAL CONDUCTIVITY;
HIGH-TEMPERATURE THERMOELECTRIC APPLICATIONS;
LOW THERMAL CONDUCTIVITY;
ORBITALS;
SEMI-METALS;
THERMOELECTRIC PROPERTIES;
ZNO;
ALUMINUM;
BAND STRUCTURE;
DENSITY FUNCTIONAL THEORY;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
FERMI LEVEL;
SYNTHESIS (CHEMICAL);
THERMAL CONDUCTIVITY;
THERMOELECTRIC EQUIPMENT;
THERMOELECTRICITY;
ZINC OXIDE;
STRUCTURAL PROPERTIES;
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EID: 78651348670
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2010.11.020 Document Type: Article |
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Times cited : (99)
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References (27)
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