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Volumn 95, Issue 21, 2009, Pages

Thermoelectric properties and anisotropic electronic band structure on the In4Se3-x compounds

(8) Rhyee, Jong Soo a Cho, Eunseog a Lee, Kyu Hyoung a Lee, Sang Mock a Kim, Sang Il a Kim, Hyun Sik a Kwon, Yong Seung b Kim, Sung Jin c

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Sungkyunkwan University (South Korea)

c Kumoh National Institute of Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE CALCULATION; ELECTRONIC BAND; ELECTRONIC BAND STRUCTURE; FIGURE OF MERIT; LOCALIZED HOLES; PEIERLS DISTORTION; POLYCRYSTALLINE COMPOUNDS; POWER FACTORS; SEMICONDUCTING BANDS; THERMOELECTRIC PROPERTIES;

ANISOTROPY; BAND STRUCTURE; ELECTRIC POWER FACTOR; INDIUM; THERMOELECTRIC EQUIPMENT;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 71549146865 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3266579 Document Type: Article

Times cited : (69)

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