Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 71-75

  Lieten, R R ^a,b   Richard, O ^b   Degroote, S ^b   Leys, M ^b   Bender, H ^b   Borghs, G ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b IMEC   (Belgium)

Author keywords

A1. Diffusion; A1. Interfaces; A3. Molecular beam epitaxy; B1. GaN; B1. Ge3N4; B1. Germanium

Indexed keywords

A1. DIFFUSION; A1. INTERFACES; A3. MOLECULAR BEAM EPITAXY; B1. GAN; B1. GE3N4; B1. GERMANIUM;

ATOMS; DIFFUSION; EPITAXIAL GROWTH; GALLIUM NITRIDE; GERMANIUM; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 78651100868     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.146     Document Type: Article

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