Evolution of defect profiles in He-implanted silicon studied by slow positrons

Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 665-667

  Brusa, R S ^a   Karwasz, G P ^a   Tiengo, N ^a   Zecca, A ^a   Corni, F ^b   Nobili, C ^b   Ottaviani, G ^b   Tonini, R ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Bubble Precursors; Defects in Si; Helium Implantation

Indexed keywords

ANNEALING; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; DESORPTION; EVAPORATION; HELIUM; ION IMPLANTATION; PARTICLE BEAMS; SINGLE CRYSTALS;

THERMAL DESORPTION MEASUREMENT; VARIABLE ENERGY POSITRON BEAM;

SEMICONDUCTING SILICON;

EID: 5244340187     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.255-257.665     Document Type: Article

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