Application of lattice strain analysis of semiconductor device by nano-beam diffraction using the 300 kV Cold-FE TEM

Journal of Physics: Conference Series

Volumn 241, Issue , 2010, Pages

  Sato, T ^a   Matsumoto, H ^a   Nakano, K ^a   Konno, M ^a   Fukui, M ^a   Nagaoki, I ^b   Taniguchi, Y ^b  

^a HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

^b Higachi High Technologies Corp   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; INELASTIC SCATTERING; ION BEAMS; SEMICONDUCTOR DEVICES; THICKNESS MEASUREMENT;

ELECTRON ENERGY LOSS SPECTRUM; FOCUSED-ION-BEAM SYSTEM; LATTICE STRAIN; LATTICE STRAIN ANALYSIS; MEAN FREE PATH; NANOBEAM DIFFRACTION; NEIGHBOURHOOD; SAMPLE THICKNESS;

STRAIN RATE;

EID: 78651086506     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/241/1/012014     Document Type: Conference Paper

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