Dopant concentration dependence of structure, optical, and magnetic properties of ZnO:Fe thin films

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 30-33

  Hong, Ruijin ^a   Wen, Herui ^a   Liu, Caiming ^b   Chen, Jinglin ^a   Liao, Jinsheng ^a  

^a JIANGXI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b INSTITUTE OF CHEMISTRY   (China)

Author keywords

A1. Doping; A3. Physical vapor deposition; B1. Oxides; B2. Semiconductor IIVI materials

Indexed keywords

A1. DOPING; A3. PHYSICAL VAPOR DEPOSITION; B1. OXIDES; BAND-GAP EDGE; CONCENTRATION QUENCHING EFFECT; CRYSTALLINE QUALITY; DIFFRACTION PEAKS; DOPANT CONCENTRATIONS; FE ATOMS; FE CONTENT; FE DOPING; FE-DOPED; FERROMAGNETIC BEHAVIORS; MAGNETIC MEASUREMENTS; NEAR BAND EDGE EMISSIONS; OPTICAL TRANSMITTANCE; SEMICONDUCTOR II-VI MATERIALS; XRD SPECTRA; ZNO; ZNO FILMS; ZNO THIN FILM;

ABSORPTION SPECTROSCOPY; ATOMIC SPECTROSCOPY; CONCENTRATION (PROCESS); DIFFRACTION; MAGNETIC PROPERTIES; MAGNETIC VARIABLES MEASUREMENT; METALLIC FILMS; OPTICAL FILMS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

ZINC OXIDE;

EID: 78651086489     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.025     Document Type: Article

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