Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: Dependence on carrier transport

Optics Express

Volumn 17, Issue 6, 2009, Pages 4712-4717

  Chen, Peiliang ^a   Xiangyang, Ma ^a   Li, Dongsheng ^a   Zhang, Yuanyuan ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; II-VI SEMICONDUCTORS; METAL INSULATOR BOUNDARIES; MIM DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SPONTANEOUS EMISSION; SUBSTRATES; ZINC OXIDE;

CURRENT INCREASE; ELECTRICALLY PUMPED; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL-INSULATOR SEMICONDUCTOR DEVICES; NEGATIVE DIFFERENTIAL RESISTANCES; POSITIVE BIAS VOLTAGES; RANDOM LASING; SI SUBSTRATES;

MIS DEVICES;

EID: 62549151266     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.004712     Document Type: Article

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