Variation tolerant sensing scheme of spin-transfer torque memory for yield improvement

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2010, Pages 432-437

  Sun, Zhenyu ^a   Li, Hai ^a   Chen, Yiran ^b   Wang, Xiaobin ^c  

^a POLYTECHNIC UNIVERSITY   (United States)

^b University of Pittsburgh   (United States)

^c SEAGATE TECHNOLOGY   (United States)

Author keywords

Process variations; STT RAM; Yield

Indexed keywords

COMPUTER AIDED DESIGN; MONTE CARLO METHODS;

MAGNETIC TUNNELING JUNCTIONS; MASSIVE PRODUCTION; PROCESS VARIATION; RANDOM ACCESS MEMORY; SPIN TRANSFER TORQUE; STT RAMS; YIELD; ZERO STANDBY POWER;

RANDOM ACCESS STORAGE;

EID: 78650902771     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCAD.2010.5653720     Document Type: Conference Paper

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