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Volumn , Issue , 2010, Pages 148-153

A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM)

Author keywords

Self reference; Spin transfer torque; STT RAM

Indexed keywords

MAGNETIC TUNNELING JUNCTIONS; MEASUREMENT RESULTS; NON DESTRUCTIVE; RANDOM ACCESS MEMORIES; REFERENCE VALUES; ROBUSTNESS ANALYSIS; SELF-REFERENCES; SENSING SCHEMES; SPIN TRANSFER TORQUE; WRITE-BACK;

EID: 77953118185     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (52)

References (11)
  • 3
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  • 5
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  • 6
    • 34247864561 scopus 로고    scopus 로고
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    • T. Kawahara, et al., "2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read," Proc. IEEE International Solid-State Circuits Conference, Tech. Dig., 2007, pp. 480-617.
    • Proc. IEEE International Solid-State Circuits Conference, Tech. Dig., 2007 , pp. 480-617
    • Kawahara, T.1
  • 7
    • 34250805460 scopus 로고    scopus 로고
    • A High-density and High-speed 1T-4MTJ MRAM with Voltage Offset Self-Reference Sensing Scheme
    • H. Tanizaki, "A High-density and High-speed 1T-4MTJ MRAM with Voltage Offset Self-Reference Sensing Scheme," Proc. IEEE Asian Solid-State Circuits Conference, 2006, pp. 303-306.
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  • 8
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  • 9
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    • An Overview of Nonvolatile Memory Technology and the Implication for Tools and Architectures
    • H. Li, et al., "An Overview of Nonvolatile Memory Technology and The Implication for Tools and Architectures," Design, Automation & test in Europe Conference and Exhibition, Apr. 2009, pp. 731-736.
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  • 10
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    • A 0.24-μm 2.0-V 1T1MTJ 16-kb Nonvolatile Magnetoresistance RAM with Self-Reference Sensing Scheme
    • Nov.
    • G. Jeong et al., "A 0.24-μm 2.0-V 1T1MTJ 16-kb Nonvolatile Magnetoresistance RAM With Self-Reference Sensing Scheme", IEEE Jour. of Solid-State Circuits, vol. 38, No. 11, Nov. 2003, pp. 1906-1910.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.