SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 97, Issue 26, 2010, Pages

Room temperature negative differential resistance based on a single ZnO nanowire/CuPc nanofilm hybrid heterojunction

(4) Guo, Wen a Yang, Ya a Qi, Junjie a Zhang, Yue a

a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPES; ENERGY-BAND DIAGRAM; LIGHT ILLUMINATION; LIGHT INTENSITY; NANO FILMS; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK CURRENTS; PEAK TO VALLEY CURRENT RATIO; PEAK VOLTAGE; ROOM TEMPERATURE; SAMPLE BIAS; ZNO;

NEGATIVE RESISTANCE; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 78650896441 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3532104 Document Type: Article

Times cited : (17)

References (19)

1
- 36149018587
- 0031-899X, 10.1103/PhysRev.109.603
- L. Esaki, Phys. Rev. 0031-899X 109, 603 (1958). 10.1103/PhysRev.109.603
- (1958) Phys. Rev. , vol.109 , pp. 603
- Esaki, L.¹

2
- 0016072199
- 0003-6951, 10.1063/1.1655067
- L. L. Chang, L. Esaki, and R. Tsu, Appl. Phys. Lett. 0003-6951 24, 593 (1974). 10.1063/1.1655067
- (1974) Appl. Phys. Lett. , vol.24 , pp. 593
- Chang, L.L.¹ Esaki, L.² Tsu, R.³

3
- 0022080461
- 0021-4922, 10.1143/JJAP.24.L466
- M. Tsuchiya, H. Sakaki, and J. Yoshino, Jpn. J. Appl. Phys., Part 2 0021-4922 24, L466 (1985). 10.1143/JJAP.24.L466
- (1985) Jpn. J. Appl. Phys., Part 2 , vol.24 , pp. 466
- Tsuchiya, M.¹ Sakaki, H.² Yoshino, J.³

4
- 0033584805
- 0036-8075, 10.1126/science.286.5444.1550
- J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, Science 0036-8075 286, 1550 (1999). 10.1126/science.286.5444.1550
- (1999) Science , vol.286 , pp. 1550
- Chen, J.¹ Reed, M.A.² Rawlett, A.M.³ Tour, J.M.⁴

5
- 0034726289
- 0031-9007, 10.1103/PhysRevLett.85.1918
- J. Gaudioso, L. J. Lauhon, and W. Ho, Phys. Rev. Lett. 0031-9007 85, 1918 (2000). 10.1103/PhysRevLett.85.1918
- (2000) Phys. Rev. Lett. , vol.85 , pp. 1918
- Gaudioso, J.¹ Lauhon, L.J.² Ho, W.³

6
- 0000201601
- 0003-6951, 10.1063/1.1328773
- C. Zeng, H. Wang, B. Wang, J. Yang, and J. G. Hou, Appl. Phys. Lett. 0003-6951 77, 3595 (2000). 10.1063/1.1328773
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3595
- Zeng, C.¹ Wang, H.² Wang, B.³ Yang, J.⁴ Hou, J.G.⁵

7
- 0842330466
- Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces
- DOI 10.1021/nl0348589
- N. P. Guisinger, M. E. Greene, R. Basu, A. S. Baluch, and M. C. Hersam, Nano Lett. 1530-6984 4, 55 (2004). 10.1021/nl0348589 (Pubitemid 38167863)
- (2004) Nano Letters , vol.4 , Issue.1 , pp. 55-59
- Guisinger, N.P.¹ Greene, M.E.² Basu, R.³ Baluch, A.S.⁴ Hersam, M.C.⁵

8
- 28844478956
- Molecules on insulating films: Scanning-tunneling microscopy imaging of individual molecular orbitals
- DOI 10.1103/PhysRevLett.94.026803, 026803
- J. Repp, G. Meyer, S. M. Stojkovic, A. Gourdon, and C. Joachim, Phys. Rev. Lett. 0031-9007 94, 026803 (2005). 10.1103/PhysRevLett.94.026803 (Pubitemid 40620170)
- (2005) Physical Review Letters , vol.94 , Issue.2 , pp. 1-4
- Repp, J.¹ Meyer, G.² Stojkovic, S.M.³ Gourdon, A.⁴ Joachim, C.⁵

9
- 0003748504
- (Wiley, New York).
- S. M. Sze, High-Speed Semiconductor Devices (Wiley, New York, 1990).
- (1990) High-Speed Semiconductor Devices
- Sze, S.M.¹

10
- 79956028400
- Light-controllable room temperature negative differential resistance in deep-trench type nitride-oxide tunneling device and its applications
- DOI 10.1063/1.1476959
- F. Chen, B. Z. Li, and K. D. Feng, Appl. Phys. Lett. 0003-6951 80, 3271 (2002). 10.1063/1.1476959 (Pubitemid 34599962)
- (2002) Applied Physics Letters , vol.80 , Issue.18 , pp. 3271-3273
- Chen, F.¹ Li, B.² Feng, K.D.³

11
- 45149123823
- 1530-6984, 10.1021/nl0731116
- W. K. Hong, J. I. Sohn, D. K. Hwang, S. S. Kwon, G. Jo, S. Song, S. M. Kim, H. J. Ko, S. J. Park, M. E. Welland, and T. Lee, Nano Lett. 1530-6984 8, 950 (2008). 10.1021/nl0731116
- (2008) Nano Lett. , vol.8 , pp. 950
- Hong, W.K.¹ Sohn, J.I.² Hwang, D.K.³ Kwon, S.S.⁴ Jo, G.⁵ Song, S.⁶ Kim, S.M.⁷ Ko, H.J.⁸ Park, S.J.⁹ Welland, M.E.¹⁰ Lee, T.¹¹

12
- 59349097535
- 0959-9428, 10.1039/b816791e
- P. Gao, Z. Z. Wang, K. H. Liu, Z. Xu, W. L. Wang, X. D. Bai, and E. G. Wang, J. Mater. Chem. 0959-9428 19, 1002 (2009). 10.1039/b816791e
- (2009) J. Mater. Chem. , vol.19 , pp. 1002
- Gao, P.¹ Wang, Z.Z.² Liu, K.H.³ Xu, Z.⁴ Wang, W.L.⁵ Bai, X.D.⁶ Wang, E.G.⁷

13
- 58149263348
- 1748-3387, 10.1038/nnano.2008.314
- R. S. Yang, Y. Qin, L. M. Dai, and Z. L. Wang, Nat. Nanotechnol. 1748-3387 4, 34 (2009). 10.1038/nnano.2008.314
- (2009) Nat. Nanotechnol. , vol.4 , pp. 34
- Yang, R.S.¹ Qin, Y.² Dai, L.M.³ Wang, Z.L.⁴

14
- 43349103915
- Controllable fabrication and electromechanical characterization of single crystalline Sb-doped ZnO nanobelts
- DOI 10.1063/1.2926392
- Y. Yang, J. J. Qi, Y. Zhang, Q. L. Liao, L. D. Tang, and Z. Qin, Appl. Phys. Lett. 0003-6951 92, 183117 (2008). 10.1063/1.2926392 (Pubitemid 351662039)
- (2008) Applied Physics Letters , vol.92 , Issue.18 , pp. 183117
- Yang, Y.¹ Qi, J.² Zhang, Y.³ Liao, Q.⁴ Tang, L.⁵ Qin, Z.⁶

15
- 0013011716
- 0003-6951, 10.1063/1.97210
- M. A. Reed, J. W. Lee, and H. -L. Tsai, Appl. Phys. Lett. 0003-6951 49, 158 (1986). 10.1063/1.97210
- (1986) Appl. Phys. Lett. , vol.49 , pp. 158
- Reed, M.A.¹ Lee, J.W.² Tsai, H.-L.³

16
- 0010968133
- 0556-2805, 10.1103/PhysRevB.45.9513
- C. R. H. White, H. B. Evans, L. Eaves, P. M. Martin, M. Henini, G. Hill, and M. A. Pate, Phys. Rev. B 0556-2805 45, 9513 (1992). 10.1103/PhysRevB.45.9513
- (1992) Phys. Rev. B , vol.45 , pp. 9513
- White, C.R.H.¹ Evans, H.B.² Eaves, L.³ Martin, P.M.⁴ Henini, M.⁵ Hill, G.⁶ Pate, M.A.⁷

17
- 79955984768
- 0003-6951, 10.1063/1.1494465
- A. I. Yakimov, A. S. Derjabin, L. V. Sokolov, O. P. Pchelyakov, A. V. Dvurechenskii, M. M. Moiseeva, and N. S. Sokolov, Appl. Phys. Lett. 0003-6951 81, 499 (2002). 10.1063/1.1494465
- (2002) Appl. Phys. Lett. , vol.81 , pp. 499
- Yakimov, A.I.¹ Derjabin, A.S.² Sokolov, L.V.³ Pchelyakov, O.P.⁴ Dvurechenskii, A.V.⁵ Moiseeva, M.M.⁶ Sokolov, N.S.⁷

18
- 0001156050
- 0556-2805, 10.1103/PhysRevB.5.4891
- F. Stern, Phys. Rev. B 0556-2805 5, 4891 (1972). 10.1103/PhysRevB.5.4891
- (1972) Phys. Rev. B , vol.5 , pp. 4891
- Stern, F.¹

19
- 31144433431
- Carrier injection and transport characteristics of copper phthalocyanine thin films under low to extremely high current densities
- DOI 10.1063/1.2165197, 033508
- T. Matsushima, H. Sasabe, and C. Adachi, Appl. Phys. Lett. 0003-6951 88, 033508 (2006). 10.1063/1.2165197 (Pubitemid 43133728)
- (2006) Applied Physics Letters , vol.88 , Issue.3 , pp. 1-3
- Matsushima, T.¹ Sasabe, H.² Adachi, C.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.