Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature

Applied Physics Letters

Volumn 81, Issue 3, 2002, Pages 499-501

  Yakimov, A I ^a   Derjabin, A S ^a   Sokolov, L V ^a   Pchelyakov, O P ^a   Dvurechenskii, A V ^a   Moiseeva, M M ^b   Sokolov, N S ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE OSCILLATIONS; DIFFERENT SIZES; ENERGY SEPARATIONS; GE QUANTUM DOT; LATTICE-MATCHED; MATRIX; NEGATIVE DIFFERENTIAL CONDUCTANCE; ROOM TEMPERATURE; SI(111) SUBSTRATE; STRANSKI-KRASTANOV GROWTH MODE; ZERO-DIMENSIONAL;

GERMANIUM; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM DOTS;

RESONANT TUNNELING DIODES;

EID: 79955984768     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494465     Document Type: Article

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