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Volumn 80, Issue 18, 2002, Pages 3271-3273
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Light-controllable room temperature negative differential resistance in deep-trench type nitride-oxide tunneling device and its applications
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND TO BAND TUNNELING;
CURRENT PEAK;
LIGHT ILLUMINATION;
LIGHT INTENSITY;
METAL OXIDE SEMICONDUCTOR;
METAL-INSULATOR-SEMICONDUCTORS;
NEGATIVE DIFFERENTIAL RESISTANCES;
PEAK TO VALLEY CURRENT RATIO;
PHOTO-INDUCED;
QUANTUM DEVICE;
ROOM TEMPERATURE;
ROOM-TEMPERATURE OPERATION;
SILICON BASED OPTOELECTRONICS;
TUNGSTEN LAMPS;
TUNNELING DEVICE;
WIRELESS COMMUNICATIONS;
INCANDESCENT LAMPS;
INTEGRATED CIRCUITS;
METAL INSULATOR BOUNDARIES;
MIS DEVICES;
NEGATIVE RESISTANCE;
POLYSILICON;
TUNGSTEN;
WIRELESS TELECOMMUNICATION SYSTEMS;
NITRIDES;
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EID: 79956028400
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1476959 Document Type: Article |
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Times cited : (3)
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References (7)
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