Control of defect-mediated tunneling barrier heights in ultrathin MgO films

Applied Physics Letters

Volumn 97, Issue 26, 2010, Pages

  Kim, D J ^a   Choi, W S ^b,e   Schleicher, F ^a,c   Shin, R H ^d   Boukari, S ^a   Davesne, V ^a   Kieber, C ^a   Arabski, J ^a   Schmerber, G ^a   Beaurepaire, E ^a   Jo, W ^d   Bowen, M ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b Seoul National University   (South Korea)

^c WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d Ewha Womans University   (South Korea)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; CONDUCTING ATOMIC FORCE MICROSCOPY; HOTSPOTS; LOWER DENSITY; MGO BARRIER; MGO FILMS; MGO THIN FILMS; OPTICAL ABSORPTION SPECTROSCOPY; OXYGEN DEFECT; TUNNEL CURRENTS; TUNNELING BARRIER HEIGHTS; TUNNELING CHARACTERISTICS; TUNNELING PROPERTIES; ULTRA-THIN;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CONDUCTIVE FILMS; DEFECT DENSITY; DEFECTS; OXYGEN; OXYGEN VACANCIES; POPULATION STATISTICS; ULTRATHIN FILMS;

ABSORPTION SPECTROSCOPY;

EID: 78650881181     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3531652     Document Type: Article

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