Bias-crafted magnetic tunnel junctions with bistable spin-dependent states

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Bowen, M ^a,b,c   Maurice, J L ^e   Barthelemy A ^e   Prod'homme, P ^e   Jacquet, E ^e   Contour, J P ^e   Imhoff, D ^d   Colliex, C ^d  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^d UNIVERSITÉ PARIS SUD   (France)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; ENERGY DISSIPATION; LANTHANUM COMPOUNDS; MAGNETIC DEVICES; MAGNETORESISTANCE; SEMICONDUCTOR DEVICES;

BISTABLE SPIN DEPENDENT STATES; MAGNETIC TUNNEL JUNCTIONS; SPINTRONIC RESEARCH; TWO RESISTANCE STATES;

TUNNEL JUNCTIONS;

EID: 33748479710     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345592     Document Type: Article

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