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Volumn 97, Issue 26, 2010, Pages

Carbon-based nanomaterials as contacts to graphene nanoribbons

Author keywords

[No Author keywords available]

Indexed keywords

CARBON-BASED; CONTACT MATERIAL; CONTACT TRANSFER; DEVICE PERFORMANCE; ELECTRICAL CONTACTS; GRAPHENE LAYERS; GRAPHENE NANORIBBONS; INTERFACIAL DEFECT; NANO DEVICE; NANO-MATERIALS; QUANTUM TRANSPORT SIMULATIONS; STACKING STRUCTURES; WAVE VECTOR;

EID: 78650874522     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3533803     Document Type: Article
Times cited : (12)

References (17)
  • 2
    • 27744475163 scopus 로고    scopus 로고
    • Experimental observation of the quantum Hall effect and Berry's phase in graphene
    • DOI 10.1038/nature04235, PII N04235
    • Y. Zhang, Y. Tan, H. L. Stormer, and P. Kim, Nature (London) 0028-0836 438, 201 (2005). 10.1038/nature04235 (Pubitemid 41599868)
    • (2005) Nature , vol.438 , Issue.7065 , pp. 201-204
    • Zhang, Y.1    Tan, Y.-W.2    Stormer, H.L.3    Kim, P.4
  • 4
    • 34547334459 scopus 로고    scopus 로고
    • Energy band-gap engineering of graphene nanoribbons
    • DOI 10.1103/PhysRevLett.98.206805
    • M. Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. 0031-9007 98, 206805 (2007). 10.1103/PhysRevLett.98.206805 (Pubitemid 47139572)
    • (2007) Physical Review Letters , vol.98 , Issue.20 , pp. 206805
    • Han, M.Y.1    Ozyilmaz, B.2    Zhang, Y.3    Kim, P.4
  • 6
    • 40049093097 scopus 로고    scopus 로고
    • Chemically derived, ultrasmooth graphene nanoribbon semiconductors
    • DOI 10.1126/science.1150878
    • X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science 0036-8075 319, 1229 (2008). 10.1126/science.1150878 (Pubitemid 351323015)
    • (2008) Science , vol.319 , Issue.5867 , pp. 1229-1232
    • Li, X.1    Wang, X.2    Zhang, L.3    Lee, S.4    Dai, H.5
  • 7
    • 44149119344 scopus 로고    scopus 로고
    • Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
    • DOI 10.1103/PhysRevLett.100.206803
    • X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, and H. Dai, Phys. Rev. Lett. 0031-9007 100, 206803 (2008). 10.1103/PhysRevLett.100.206803 (Pubitemid 351718006)
    • (2008) Physical Review Letters , vol.100 , Issue.20 , pp. 206803
    • Wang, X.1    Ouyang, Y.2    Li, X.3    Wang, H.4    Guo, J.5    Dai, H.6
  • 8
    • 0042991275 scopus 로고    scopus 로고
    • Ballistic carbon nanotube field-effect transistors
    • DOI 10.1038/nature01797
    • A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 0028-0836 424, 654 (2003). 10.1038/nature01797 (Pubitemid 36987985)
    • (2003) Nature , vol.424 , Issue.6949 , pp. 654-657
    • Javey, A.1    Guo, J.2    Wang, Q.3    Lundstrom, M.4    Dai, H.5
  • 14
    • 70349529939 scopus 로고    scopus 로고
    • 0031-9007, 10.1103/PhysRevLett.103.086801
    • H. Santos, L. Chico, and L. Brey, Phys. Rev. Lett. 0031-9007 103, 086801 (2009). 10.1103/PhysRevLett.103.086801
    • (2009) Phys. Rev. Lett. , vol.103 , pp. 086801
    • Santos, H.1    Chico, L.2    Brey, L.3
  • 17
    • 78650913039 scopus 로고    scopus 로고
    • Contact Resistance to a 1-D Quasi-Ballistic Nanotube/wire
    • 0741-3106 (to be published).
    • P. M. Solomon, " Contact Resistance to a 1-D Quasi-Ballistic Nanotube/wire.," IEEE Electron Device Lett. 0741-3106 (to be published).
    • IEEE Electron Device Lett.
    • Solomon, P.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.