Strong influence of complex band structure on tunneling electroresistance: A combined model and ab initio study

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 21, 2010, Pages

  Hinsche, N F ^a   Fechner, M ^b   Bose, P ^a   Ostanin, S ^b   Henk, J ^b   Mertig, I ^a,b   Zahn, P ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78650841149     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.214110     Document Type: Article

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