Ab initio chemical kinetics for SiH3 reactions with Si xH2x+2 (x = 1-4)

Journal of Physical Chemistry A

Volumn 114, Issue 51, 2010, Pages 13353-13361

  Raghunath, P ^a   Lin, M C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSTRACTING; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; DENSITY FUNCTIONAL THEORY; FILM GROWTH; ISOMERS; MOLECULAR ORBITALS; POTENTIAL ENERGY; RATE CONSTANTS; SILANES; SUBSTITUTION REACTIONS;

A-SI THIN FILMS; AB INITIO MOLECULAR ORBITALS; BASIS SETS; GAS PHASE KINETICS; H-ABSTRACTION; HEATS OF FORMATION; REACTION BARRIERS; TEMPERATURE RANGE;

SURFACE REACTIONS;

EID: 78650610616     PISSN: 10895639     EISSN: 15205215     Source Type: Journal    
DOI: 10.1021/jp1082196     Document Type: Article

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