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Solid State Sciences

Volumn 13, Issue 1, 2011, Pages 216-223

GaN powders from ammonolysis: Preparation, structure, morphology, and optical properties

(4) Kim, Young Il a,b Li, Jun a Zhang, Jin Ping a,c Seshadri, Ram a

a University of California (United States)

b Yeungnam University (South Korea)

c SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

Author keywords

Ammonolysis; GaN; Photoluminescence; Rietveld; X ray line broadening

Indexed keywords

AMMONOLYSIS; BAND GAPS; BAND-EDGE EMISSIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FIGURES OF MERITS; GAN; GAN POWDERS; HIGH CRYSTALLINITY; HIGH QUALITY; LEADING EDGE; LIGHTING TECHNOLOGY; OXYGEN CONTENT; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE PROPERTIES; POLYCRYSTALLINE GAN; RIETVELD; SCANNING ELECTRONS; STARTING MATERIALS; WILLIAMSON-HALL; WURTZITE GAN; X-RAY LINES;

ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; ENERGY GAP; FILM PREPARATION; GALLIUM NITRIDE; LATTICE CONSTANTS; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; RIETVELD METHOD; RIETVELD REFINEMENT; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY; X RAYS; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 78650595275 PISSN: 12932558 EISSN: None Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2010.11.017 Document Type: Article

Times cited : (9)

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