Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation

Applied Physics A: Materials Science and Processing

Volumn 71, Issue 2, 2000, Pages 175-180

  Teichert, J ^a   Bischoff, L ^a   Hausmann, S ^a   Voelskow, M ^a   Hobert, H ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; ANNEALING; COBALT; CRYSTAL DEFECTS; CURRENT DENSITY; ION IMPLANTATION; IRRADIATION; RADIATION DAMAGE; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMAL EFFECTS;

ION CHANNELING; LATTICE DAMAGE; MICRO RAMAN ANALYSIS; RADIATION DAMAGE MEASUREMENTS;

SEMICONDUCTING SILICON;

EID: 0034247786     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (33)

1. M. Tamura, S. Shukuri, T. Ishitani, M. Ichikawa, T. Doi: Jpn. J. Appl. Phys. 23, L417 (1984)
2. M. Tamura, S. Shukuri, M. Ichikawa, Y. Wada, T. Ishitani: Nucl. Instrum. Methods B 7/8, 858 (1985)
3. C.R. Musil, J. Melngailis, S. Etchin, T.E. Haynes: J. Appl. Phys. 80, 3727 (1996)
4. S. Mantl: Mater. Sci. Rep. 8, 1 (1991)
5. F.F. Morehead Jr., B.L. Crowder: Radiat. Eff. 6, 27 (1970), Value calculated from (7) with the parameters given in the paper
6. S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, D. Grambole, F. Herrmann, W. Möller: Appl. Phys. Lett. 72, 2719 (1998)
7. J.R. Dennis, E.B. Hale: Radiat. Eff. 30, 219 (1976)
8. L.M. Howe, M.H. Rainville: Nucl. Instrum. Methods 182/183, 143 (1981)
9. J. Narayan, D. Fathy, O.S. Oen, O.W. Holland: Mater Lett. 2, 211 (1984)
10. G. Bai, M.-A. Nicolef. J. Appl. Phys: 70, 649 (1991)
11. S.U. Campisano, S. Coffa, V. Raineri, F. Priolo, E. Rimini: Nucl. Instrum. Methods B 80/81, 514 (1993)
12. G. Carter: J. Appl. Phys: 79, 8285 (1996)
13. J.S. Williams, K.T. Short, R.G. Elliman, M.C. Ridgway, R. Goldberg: Nucl. Instrum. Methods. B 48, 431 (1990)
14. P.J. Schultz, C. Jagadish, M.C. Ridgway, R.G. Elliman, J.S. Williams: Phys. Rev. B 44, 9118 (1991)
15. T.E. Haynes, O.W. Holland: Appl. Phys. Lett. 61, 61 (1992)
16. R.A. Brown, J.S. Williams: J. Appl. Phys. 83, 7533 (1998)
17. J. Teichert, M. Voelskow, L. Bischoff, S. Hausmann: Vacuum 51, 261 (1998)
18. L. Bischoff, E. Hesse, D. Panknin, W. Skorupa, J. Teichert: Microelectron. Eng. 23, 115 (1994)
19. E. Hesse, L. Bischoff, J. Teichert: J. Phys D: Appl. Phys. 27, 427 (1994)
20. L.R. Doolittle: Nucl. Instrum. Methods B 9, 224 (1985)
21. H. Wirth, W. Anwand, G. Brauer, M. Voelskow, D. Panknin, W. Skorupa, PG. Coleman: Mater. Sci. Forum 264-268, 729 (1998)
22. J. Teichert, H. Hobert, L. Bischoff, S. Hausmann: Microelectron. Eng. 50, 187 (2000)
23. G.L. Olsen, J. A. Roth: Mater. Sci. Rep. 3, 1 (1988)
24. M. Tamura, K. Yagi, N. Natsuaki, M. Miyao, T. Tokuyama: Appl. Phys. 20, 225 (1979)
25. O.W. Holland, J. Narayan: Appl. Phys. Lett. 44, 758 (1984)
26. S. Cannavó, A. La Ferla, E. Rimini, G. Ferla, L. Gandolfi: J. Appl. Phys. 59, 4038 (1986)
27. J. Melngailis: J. Vac. Sci. Technol. B 5, 469 (1987)
28. S.V. Hutchinson, M.F. Finney, K.J. Reeson, M.A. Harry, R.M. Gwilliam, B.J. Sealy: Proc. Conf. Ion Implantation Technology, Catania, 934 (1994)
29. S. Hausmann, L. Bischoff, J. Teichert: J. Appl. Phys., submitted
30. R. Linnros, G. Elliman, W.L. Brown: J. Mater. Res. 3, 1208 (1988)
31. R.A. Brown, J.S. Williams: J. Appl. Phys. 83, 7533 (1998)
32. V. Heera, T. Henkel, R. Kögler, W. Skorupa: Phys. Rev. B 52, 15776 (1995)
33. J. Teichert, L. Bischoff, S. Hausmann: J. Vac. Sci. Technol. B 16, 2574 (1998)