Effect of doping concentration on photovoltaic property of ZnO:Al/Si heterojunction

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 4, Issue 5, 2010, Pages 681-684

  Zhang, Weiying ^a,b   Liu, Zhenzhong ^a   Han, Yunxia ^a   Fu, Zhuxi ^b  

^a LUOYANG NORMAL COLLEGE   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Al concentration; Photovoltaic property; ZnO Si

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; HALL EFFECT; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; OPEN CIRCUIT VOLTAGE; OXIDE MINERALS; REACTIVE SPUTTERING; SEMICONDUCTOR DOPING; ZINC OXIDE;

AL-CONCENTRATION; C-AXIS ORIENTATIONS; CRYSTAL QUALITIES; EFFECT OF DOPING; HALL EFFECT MEASUREMENT; PHOTOVOLTAIC PROPERTY; RESPONSE SPECTRA; SPUTTERING TARGET;

PHOTOVOLTAIC EFFECTS;

EID: 78650401305     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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