The effect of temperature on the morphology of Ge/Si quantum dots grown by ion beam sputtering

Gongneng Cailiao/Journal of Functional Materials

Volumn 41, Issue 11, 2010, Pages 1982-1985

  Zhang, Xue Gui ^a   Wang, Chong ^a   Yang, Jie ^a,b   Pan, Hong Xing ^a   Lu, Zhi Quan ^a   Li, Liang ^a   Yang, Yu ^a  

^a YUNNAN UNIVERSITY   (China)

^b KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Ion beam sputtering; Quantum dots; Raman spectra; Surface morphology

Indexed keywords

AFM; CRYSTALLINITIES; EFFECT OF TEMPERATURE; GE QUANTUM DOT; ION-BEAM SPUTTERING; QUANTUM DOT; RAMAN SPECTRA; SI (100) SUBSTRATE;

BEAM PLASMA INTERACTIONS; GERMANIUM; ION BEAMS; ION BOMBARDMENT; IONS; MORPHOLOGY; OPTICAL WAVEGUIDES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SPUTTERING;

SURFACE MORPHOLOGY;

EID: 78650325241     PISSN: 10019731     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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