Stress control of AlN thin film sputter-deposited using ECR plasma

IEEJ Transactions on Sensors and Micromachines

Volumn 130, Issue 11, 2010, Pages 523-527

  Hino, Ryunosuke ^a   Matsumura, Takeshi ^a,b   Esashi, Masayoshi ^a   Tanaka, Shuji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

AlN; Ecr plasma; MEMS; Sputter; Stress

Indexed keywords

ACOUSTIC FILTERS; ACOUSTIC VELOCITY; ALN; ALN THIN FILMS; BALANCED PROPERTY; ECR PLASMA; ELECTROMECHANICAL COUPLING COEFFICIENTS; FABRICATION PROCESS; GAS-FLOW RATIO; HIGH FREQUENCY; LOW LOSS; LOW TEMPERATURES; LOW-ENERGY PLASMA; MODERATE TEMPERATURE; ROCKING CURVES; SPUTTER; SPUTTERING TECHNOLOGY; STRESS CONTROL; SUBSTRATE BIAS VOLTAGES; SUBSTRATE TEMPERATURE; XRD;

COMPRESSIVE STRESS; DEPOSITION; FULL WIDTH AT HALF MAXIMUM; MECHANICAL PROPERTIES; PLASMAS; SUBSTRATES; TENSILE STRESS; THIN FILMS;

BIAS VOLTAGE;

EID: 78650317212     PISSN: 13418939     EISSN: 13475525     Source Type: Journal    
DOI: 10.1541/ieejsmas.130.523     Document Type: Article

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