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Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

Improved epitaxy of ultrathin praseodymia films on chlorine passivated Si(111) reducing silicate interface formation

(7) Gevers, S a Flege, J I b Kaemena, B b Bruns, D a Weisemoeller, T a Falta, J b Wollschlager J a

a UNIVERSITY OF OSNABRÜCK (Germany)

b UNIVERSITY OF BREMEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICATES; BIXBYITE; BULK VALUE; COMPARATIVE STUDIES; CRYSTALLINE FILMS; CRYSTALLINITIES; INTERFACE FORMATION; INTERFACE LAYER; SI (1 1 1); SI(111) SUBSTRATE; ULTRA-THIN; X-RAY REFLECTOMETRY; X-RAY STANDING WAVES;

AMORPHOUS FILMS; CHLORINE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; STOICHIOMETRY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

AMORPHOUS SILICON;

EID: 78650317131 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3525175 Document Type: Article

Times cited : (6)

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