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Volumn 257, Issue 6, 2011, Pages 1854-1858

Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

(7) Koinkar, Pankaj M a Patil, Sandip S b Kim, Tae Gyu c Yonekura, Daisuke a More, Mahendra A b Joag, Dilip S b Murakami, Ri Ichi a

a UNIVERSITY OF TOKUSHIMA (Japan)

b UNIVERSITY OF PUNE (India)

c Pusan National University (South Korea)

Author keywords

Boron doping; CVD diamond; Field emission; Raman spectroscopy

Indexed keywords

BORON; FIELD EMISSION; MICROWAVES; NANOCRYSTALS; PLASMA CVD; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SURFACE MORPHOLOGY;

BORON-DOPED DIAMOND FILMS; BORON-DOPING; CVD DIAMOND; FIELD EMISSION PROPERTY; FIELD-EMISSION CHARACTERISTICS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE DIAMONDS;

DIAMOND FILMS;

EID: 78650309973 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.08.121 Document Type: Article

Times cited : (14)

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