Resonance photoemission studies of (111) oriented CeO2 thin film grown on Si (100) substrate by pulsed laser deposition

Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

  Khare, Amit ^a   Choudhary, R J ^b   Bapna, Komal ^b   Phase, D M ^b   Sanyal, Sankar P ^a  

^a BARKATULLAH UNIVERSITY   (India)

^b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY POSITIONS; BROAD BANDS; INITIAL STATE; MAXIMUM INTENSITIES; PHOTOABSORPTIONS; PHOTON ENERGY; RESONANCE PHOTOEMISSION; SI (100) SUBSTRATE; VALENCE BAND SPECTRA; VALENCE STATE; X-RAY PHOTOEMISSIONS;

CERIUM; CERIUM COMPOUNDS; DEPOSITION; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; NUCLEAR ENERGY; PHOTOEMISSION; PHOTONS; POTENTIAL ENERGY; PULSED LASER DEPOSITION; PULSED LASERS; RESONANCE; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION;

BINDING ENERGY;

EID: 78650259621     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3514571     Document Type: Conference Paper

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