SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages

Study of transport properties in graphene monolayer flakes on SiO 2 substrates

(6) Tirado, J M a Nezich, D b Zhao, X b Chung, J W b Kong, J b Palacios, T b

a UNIVERSITY OF CASTILLA LA MANCHA (Spain)

b USA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GRAPHENE; MONOLAYERS; SILICON COMPOUNDS; SILICON OXIDES;

CHARGED IMPURITY; COULOMB SCATTERING; ELECTRONS AND HOLES; GRAPHENE DEVICES; HIGH-TEMPERATURE ANNEALING; MOBILITY CURVES; VERTICAL ELECTRIC FIELDS; WORK STUDY;

TRANSPORT PROPERTIES;

EID: 78650167297 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3516649 Document Type: Article

Times cited : (4)

References (13)

1
- 33847690144
- The rise of graphene
- DOI 10.1038/nmat1849, PII NMAT1849
- A. K. Geim and K. S. Novoselov, Nature Mater. NMAACR 1476-1122 6, 183 (2007). 10.1038/nmat1849 (Pubitemid 46353764)
- (2007) Nature Materials , vol.6 , Issue.3 , pp. 183-191
- Geim, A.K.¹ Novoselov, K.S.²

2
- 34247846118
- Molecular Nanostructures: Carbon ahead
- DOI 10.1038/nmat1898, PII NMAT1898
- T. Pichler, Nature Mater. NMAACR 1476-1122 6, 332 (2007). 10.1038/nmat1898 (Pubitemid 46693189)
- (2007) Nature Materials , vol.6 , Issue.5 , pp. 332-333
- Pichler, T.¹

3
- 64649085838
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.102.136808
- X. Hong, A. Posadas, K. Zou, C. H. Ahn, and J. Zhu, Phys. Rev. Lett. PRLTAO 0031-9007 102, 136808 (2009). 10.1103/PhysRevLett.102.136808
- (2009) Phys. Rev. Lett. , vol.102 , pp. 136808
- Hong, X.¹ Posadas, A.² Zou, K.³ Ahn, C.H.⁴ Zhu, J.⁵

4
- 34547841212
- EDLEDZ 0741-3106,. 10.1109/LED.2007.891668
- M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 282 (2007). 10.1109/LED.2007.891668
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 282
- Lemme, M.C.¹ Echtermeyer, T.J.² Baus, M.³ Kurz, H.⁴

5
- 7444220645
- Electric field in atomically thin carbon films
- DOI 10.1126/science.1102896
- K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. Firsov, Science SCIEAS 0036-8075 306, 666 (2004). 10.1126/science.1102896 (Pubitemid 39440910)
- (2004) Science , vol.306 , Issue.5696 , pp. 666-669
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Zhang, Y.⁵ Dubonos, S.V.⁶ Grigorieva, I.V.⁷ Firsov, A.A.⁸

6
- 27744534165
- Two-dimensional gas of massless Dirac fermions in graphene
- DOI 10.1038/nature04233, PII N04233
- K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature (London) NATUAS 0028-0836 438, 197 (2005). 10.1038/nature04233 (Pubitemid 41599867)
- (2005) Nature , vol.438 , Issue.7065 , pp. 197-200
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Katsnelson, M.I.⁵ Grigorieva, I.V.⁶ Dubonos, S.V.⁷ Firsov, A.A.⁸

7
- 66249132067
- JCOMEL 0953-8984,. 10.1088/0953-8984/21/23/232204
- R. S. Shishir and D. K. Ferry, J. Phys.: Condens. Matter JCOMEL 0953-8984 21, 232204 (2009). 10.1088/0953-8984/21/23/232204
- (2009) J. Phys.: Condens. Matter , vol.21 , pp. 232204
- Shishir, R.S.¹ Ferry, D.K.²

8
- 34948858511
- Carbon-based electronics
- DOI 10.1038/nnano.2007.300, PII NNANO2007300
- P. Avouris, Z. Chen, and V. Perebeinos, Nat. Nanotechnol. NNAABX 1748-3387 2, 605 (2007). 10.1038/nnano.2007.300 (Pubitemid 47525190)
- (2007) Nature Nanotechnology , vol.2 , Issue.10 , pp. 605-615
- Avouris, P.¹ Chen, Z.² Perebeinos, V.³

9
- 60749107706
- NALEFD 1530-6984,. 10.1021/nl801827v
- A. Reina, X. T. Jia, J. Ho, D. Nezich, H. Son, and V. Bulovic, Nano Lett. NALEFD 1530-6984 9, 30 (2009). 10.1021/nl801827v
- (2009) Nano Lett. , vol.9 , pp. 30
- Reina, A.¹ Jia, X.T.² Ho, J.³ Nezich, D.⁴ Son, H.⁵ Bulovic, V.⁶

10
- 34548446361
- Carrier statistics and quantum capacitance of graphene sheets and ribbons
- DOI 10.1063/1.2776887
- T. Fang, A. Konar, H. Xing, and D. Jena, Appl. Phys. Lett. APPLAB 0003-6951 91, 092109 (2007). 10.1063/1.2776887 (Pubitemid 47352294)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 092109
- Fang, T.¹ Konar, A.² Xing, H.³ Jena, D.⁴

11
- 0035395813
- Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates
- DOI 10.1109/55.930678, PII S0741310601054131
- Z. -Y. Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadis, IEEE Electron Device Lett. EDLEDZ 0741-3106 22, 321 (2001). 10.1109/55.930678 (Pubitemid 32650808)
- (2001) IEEE Electron Device Letters , vol.22 , Issue.7 , pp. 321-323
- Cheng, Z.-Y.¹ Currie, M.T.² Leitz, C.W.³ Taraschi, G.⁴ Fitzgerald, E.A.⁵ Hoyt, J.L.⁶ Antoniadas, D.A.⁷

12
- 0028747841
- IETDAI 0018-9383,. 10.1109/16.337449
- S. I. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices IETDAI 0018-9383 41, 2357 (1994). 10.1109/16.337449
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 2357
- Takagi, S.I.¹ Toriumi, A.² Iwase, M.³ Tango, H.⁴

13
- 0022688857
- IETDAI 0018-9383,. 10.1109/T-ED.1986.22502
- M. S. Liang, J. Y. Choi, P. K. Ko, and C. Hu, IEEE Trans. Electron Devices IETDAI 0018-9383 33, 409 (1986). 10.1109/T-ED.1986.22502
- (1986) IEEE Trans. Electron Devices , vol.33 , pp. 409
- Liang, M.S.¹ Choi, J.Y.² Ko, P.K.³ Hu, C.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.