On the bandgap of hydrogenated nanocrystalline silicon thin films

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3755-3760

  Yan, Baojie ^a   Yue, Guozhen ^a   Sivec, Laura ^a   Jiang, Chun Sheng ^b   Yan, Yanfa ^b   Alberi, Kirstin ^b   Yang, Jeffrey ^a   Guha, Subhendu ^a  

^a UNITED SOLAR OVONIC LLC   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ABSORPTION COEFFICIENTS; AMORPHOUS TISSUES; BAND GAPS; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); HYDROGENATED NANOCRYSTALLINE SILICON THIN FILM; MATERIAL PROPERTY; NC-SI:H; PHOTON ENERGY; SOLAR-CELL APPLICATIONS; STRAIGHT LINES; VOLTAGE CHARACTERISTICS;

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; HYDROGENATION; NANOCRYSTALLINE SILICON; OPTICAL BAND GAPS; PHOTOVOLTAIC EFFECTS; SOLAR CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650155748     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616075     Document Type: Conference Paper

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