Strong gate coupling of high-Q nanomechanical resonators

Nano Letters

Volumn 10, Issue 12, 2010, Pages 4884-4889

  Sulkko, Jaakko ^a   Sillanpää, Mika A ^a   Häkkinen, Pasi ^a   Lechner, Lorenz ^a   Helle, Meri ^a   Fefferman, Andrew ^b   Parpia, Jeevak ^c   Hakonen, Pertti J ^a  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

detection; dissipation; Nanomechanics; NEMS; quantum limit

Indexed keywords

ALUMINUM FILM; BATH TEMPERATURES; COUPLING ENERGIES; DETECTION; DISSIPATION; GATE COUPLING; GATE ELECTRODES; LINEARLY PROPORTIONAL; MECHANICAL VIBRATIONS; METALLIC BEAMS; MICROWAVE CAVITY; NANOMECHANICAL RESONATORS; ON CHIPS; QUALITY FACTORS; QUANTUM LIMIT; THERMO-MECHANICAL;

MECHANICAL PROPERTIES; NANOMECHANICS; PHONONS; VIBRATIONS (MECHANICAL);

RESONATORS;

EID: 78650087300     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl102771p     Document Type: Article

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