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Volumn 55, Issue 24, 2010, Pages 7411-7423

Modeling silicon diode dose response factors for small photon fields

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE VOLUMES; BASE MATERIAL; CAVITY THEORY; CORRECTION FACTORS; DOSE RESPONSE; ELECTRON EQUILIBRIUM; FIELD SIZE; FLUENCES; HIGH DOSE; HIGH ENERGY; HIGH RESOLUTION; HIGH-ENERGY COMPONENTS; LARGER FIELDS; LOCAL SPECTRUM; LOW ENERGIES; MONTE CARLO; MONTE CARLO SIMULATION; NONEQUILIBRIUM CONDITIONS; PHOTON FIELDS; PHOTON RADIOTHERAPY; SCATTERED PHOTONS; SILICON DIODES; SILICON DISKS; SMALL CAVITIES; SMALL-FIELD RESPONSE; SPECTRAL VARIATION; THIN LAYERS; TRANSIENT EFFECT; VOLUME-AVERAGING;

EID: 78650046950     PISSN: 00319155     EISSN: 13616560     Source Type: Journal    
DOI: 10.1088/0031-9155/55/24/002     Document Type: Article
Times cited : (31)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.