High-accuracy proximity effect correction for mask writing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 2, 2007, Pages 826-833

  Abe, Takayuki ^a,c   Hattori, Yoshiaki ^b,c   Iijima, Tomohiro ^c   Anze, Hirohito ^c   Oogi, Susumu ^c   Kamikubo, Takashi ^c   Tsuchiya, Seiichi ^c   Shimizu, Mitsuko ^b   Matsuki, Kazuto ^b   Inoue, Hideo ^c   Tojo, Toru ^b,d   Takigawa, Tadahiro ^c,e  

^a Semiconductor Company   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c NUFLARE TECHNOLOGY INC   (Japan)

^d TOPCON CORPORATION   (Japan)

^e Brion Technologies KK   (Japan)

Author keywords

Correction; Electron beam; LSI; Mask; Proximity effect; Semiconductor

Indexed keywords

DATA PROCESSING; ITERATIVE METHODS;

COARSE GRAINING METHOD; PATTERN DENSITY; PROXIMITY EFFECTS; REPRESENTATIVE FIGURE METHODS;

ELECTRON BEAM LITHOGRAPHY;

EID: 34547827371     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.826     Document Type: Article

References (15)

1. J. S. Greeneich and T. Van Duser: IEEE Trans. Electron Devices 21 (1974) 286.
2. M. Prikh: J. Appl. Phys. 19 (1979) 4371.
3. M. Prikh: J. Appl. Phys. 19 (1979) 4378.
4. M. Prikh: J. Appl. Phys. 19 (1979) 4383.
5. J. M. Pavcovich: J. Vac. Sci. Technol. B 6 (1988) 443.
6. T. Tojo, R. Yoshikawa, Y. Ogawa, S. Tamamushi, Y. Hattori, S. Koikari, H. Kusakabe, T. Abe, M. Ogasawara, K. Akeno, H. Anze, K. Hattori, R. Hirano, S. Yoshitake, T. Iijima, K. Ohtoshi, K. Matsuki, N. Shimomura, N. Yamada, H. Higurashi, N. Nakayamada, Y. Fukudome, S. Hara, E. Murakami, T. Kamikubo, Y. Suzuki, S. Oogi, M. Shimizu, S. Nihimura, H. Tsurumaki, S. Yasuda, K. Ooki, K. Koyama, S. Watanabe, M. Yano, H. Suzuki, H. Hoshino, M. Toriumi, O. Watanabe, K. Tsuji, M. Katayama, S. Tsuchiya, K. Suzuki, S. Kurasawa, K. Okuzono, H. Yamada, K. Handa, Y. Suzuki, T. Akiyama, Y. Tada, A. Noma, and T. Takigawa: Proc. SPIE 3748 (1999) 416.
7. Y. Hattori, K. Hattori, K. Murooka, T. Abe, S. Yasuda, T. Uno, E. Murakami, N. Nakayamada, N. Shimomura, T. Yamashita, N. Yamada, A. Sakai, H. Honda, T. Shimoyama, K. Nakaso, H. Inoue, Y. Onimaru, K. Makiyama, Y. Ogawa, and T. Takigawa: Proc. SPIE 4754 (2002) 697.
8. T. Kamikubo, T. Abe, S. Oogi, H. Anze, M. Shimizu, M. Itoh, T. Nakasugi, T. Takigawa, T. Iijima, Y. Hattori, and T. Tojo: Jpn. J. Appl. Phys. 36 (1997) 7546.
9. M. Murai, H. Yoda, S. Okazaki, and N. Saitou: J. Vac. Sci. Technol. B 10 (1992) 3072.
10. T. Abe, S. Yamasaki, R. Yoshikawa, and T. Takigawa: Jpn. J. Appl. Phys. 30 (1991) 1528.
11. T. Abe, S. Yamasaki, T. Yamaguchi, R. Yoshikawa, and T. Takigawa: Jpn. J. Appl. Phys. 30 (1991) 2965.
12. T. Abe, S. Yamasaki, R. Yoshikawa, and T. Takigawa: J. Vac. Sci. Technol. B 9 (1991) 3059.
13. T. Abe, J. Suzuki, J. Yashima, T. Iijima, S. Oogi, H. Anze, Y. Onimaru, H. Tsurumaki, S. Tsuchiya, and Y. Hattori: submitted to Jpn. J. Appl. Phys.
14. T. Abe, J. Suzuki, J. Yashima, T. Iijima, and H. Tsurumaki: submitted to Jpn. J. Appl. Phys.
15. T. Nakasugi, S. Yamasaki, T. Abe, and I. Mori: Ext. Abstr. (Spring Meet., 1993); Japan Society of Applied Physics, p. 30 [in Japanese].