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Volumn 82, Issue 19, 2010, Pages

Optical characterization and selective addressing of the resonant modes of a micropillar cavity with a white light beam

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EID: 78649756994     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.195330     Document Type: Article
Times cited : (30)

References (37)
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    • Let us consider, for instance, a GaAs/AlAs planar λ cavity containing a thin absorbing layer placed at the field antinode; in this case Q
    • Let us consider, for instance, a GaAs/AlAs planar λ cavity containing a thin absorbing layer placed at the field antinode; in this case Q < m π / 2 γ due to absorption losses, where m is the effective order of the cavity (here m ∼ 8) and γ the fraction of the light that is absorbed for one normal-incidence path through the layer. Absorption experiments on QD arrays (Ref.) show that for a single layer of InAs QDs with 4 × 10 10 cm 2 areal density and 60 meV full width at half maximum, γ ∼ 0.0006, so that Q < 20 000. Since the typical Q of the micropillar cavities under study in the present paper is 12 000, the insertion of a layer of QDs has a negligible effect on their optical quality.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.