Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

Nanoscale Research Letters

Volumn 5, Issue 12, 2010, Pages 1897-1900

  Somaschini, C ^a   Bietti, S ^a   Fedorov, A ^b   Koguchi, N ^a   Sanguinetti, S ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Droplet epitaxy; GaAs nanostructures; Molecular beam epitaxy; Photoluminescence

Indexed keywords

DROPLET EPITAXY; GAAS; GAAS QUANTUM WELLS; GROWTH INTERRUPTION; MULTIPLE RING; TRIPLE QUANTUM;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DROP FORMATION; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM ALLOYS;

EID: 78649748646     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9752-5     Document Type: Article

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