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Applied Physics Letters

Volumn 97, Issue 21, 2010, Pages

Gate stack insulator breakdown when the interface layer thickness is scaled toward zero

(3) Suñé, Jordi a Tous, Santi a Miranda, Enrique a

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWNS; EQUIVALENT OXIDE THICKNESS; GATE INSULATOR; GATE STACKS; HIGH-K MATERIALS; INTERFACE LAYER; INTERFACIAL-LAYER THICKNESS; METAL OXIDE SEMICONDUCTOR; PERCOLATION MODELS;

LOGIC GATES; PROFITABILITY; SEMICONDUCTING SILICON; SILICON COMPOUNDS; SILICON OXIDES; SOLVENTS;

MOS DEVICES;

EID: 78649620751 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3514256 Document Type: Article

Times cited : (12)

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